英语翻译The charge displaced into the mosfet depends onthe maxim
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英语翻译
The charge displaced into the mosfet depends on
the maximum voltage applied to the mosfet,the detailed design of the
mosfet cell and the number of cells used.An exact voltage-charge profile
was found through a mixed-mode FE simulation of the charging of the
capacitor and converter.The results are shown in Figure IO for numbers of
cells between 6 and 100 (corresponding to mosfets designed for 6-100
mA).At 100 cells there is a significant displacement of charge into the
mosfet but below 30 cells the displacement does not greatly affect the
recoverable charge.
Mixed-mode circuit/FE simulation was also used to assess the efficiency of
the converter in converting the stored energy at high voltage to a 3 V output.The
circuit was that given in Figure 5 and the simulation was performed
for a range of inductor values and a range of numbers of mosfet cells.The
generator was modelled as a IO pF capacitor charged to 300 V.The mosfet was turned on IO ns
into the simulation with a 3 V signal driving through a 10 fl gate resistor
The charge displaced into the mosfet depends on
the maximum voltage applied to the mosfet,the detailed design of the
mosfet cell and the number of cells used.An exact voltage-charge profile
was found through a mixed-mode FE simulation of the charging of the
capacitor and converter.The results are shown in Figure IO for numbers of
cells between 6 and 100 (corresponding to mosfets designed for 6-100
mA).At 100 cells there is a significant displacement of charge into the
mosfet but below 30 cells the displacement does not greatly affect the
recoverable charge.
Mixed-mode circuit/FE simulation was also used to assess the efficiency of
the converter in converting the stored energy at high voltage to a 3 V output.The
circuit was that given in Figure 5 and the simulation was performed
for a range of inductor values and a range of numbers of mosfet cells.The
generator was modelled as a IO pF capacitor charged to 300 V.The mosfet was turned on IO ns
into the simulation with a 3 V signal driving through a 10 fl gate resistor
递次进入场效应管的电荷量,取决施加于场效应管的最高 电压,在设计细节上,使用的单元数量,要考虑电荷的充电效应,模拟试验对场效应(FE)的电容和整流元件,其结果在图中表明 输入和输出在6-100单元之间的的数据.(与设计效应管6-100毫安相一致)100个管的电荷进入是有効的,低于30个管,对恢复电荷没有大的影响.
混合仿真线路,即场效应(FE)模拟试验还用到评估整流器的整流 转化效能,从高压至3伏输出,该线路 效能.见图5
对于场效应管的电感取值的数字范围,模拟发电机的输入输出近乎P法的电容,充电到300伏,场效应管通过的输入输出延几纳秒.进入模拟和3伏的信号驱动通过10个平衡门电阻.
混合仿真线路,即场效应(FE)模拟试验还用到评估整流器的整流 转化效能,从高压至3伏输出,该线路 效能.见图5
对于场效应管的电感取值的数字范围,模拟发电机的输入输出近乎P法的电容,充电到300伏,场效应管通过的输入输出延几纳秒.进入模拟和3伏的信号驱动通过10个平衡门电阻.
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