大师作文网求高手翻译英语文献啊!不要翻译机
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求高手翻译英语文献啊!不要翻译机
These emissions also seem that they may be a combination of overlappingpeaks (fig. 4(b), arrows). A small intensity change is noted on heating (dotted line), implying thatthe emission is slightly affected by temperature (fig. 4(b)). At higher temperatures (293\2673 K),the luminescent intensity decreases slightly without a significant wavelength shift. Recently, itwas reported that amorphous SiOx nanowires, fabricated by laser ablation of Si-SiO2-Fe target,emit blue light at 420 and 470 nm[9], which coincides with our result (fig. 4(b)), the 10 nm difference(420\2430 nm) probably being due to the presence of Fe. Note, however, that the signalsmay also arise from intrinsic SiO2 defects, which are stabilized by adjacent impurities.Fig. 3. Heat dissipating along a and c axes during nanowire growth (a), leaving ideal thermal diffusion space during largequantities of nanowires growth (b).
These emissions also seem that they may be a combination of overlappingpeaks (fig. 4(b), arrows). A small intensity change is noted on heating (dotted line), implying thatthe emission is slightly affected by temperature (fig. 4(b)). At higher temperatures (293\2673 K),the luminescent intensity decreases slightly without a significant wavelength shift. Recently, itwas reported that amorphous SiOx nanowires, fabricated by laser ablation of Si-SiO2-Fe target,emit blue light at 420 and 470 nm[9], which coincides with our result (fig. 4(b)), the 10 nm difference(420\2430 nm) probably being due to the presence of Fe. Note, however, that the signalsmay also arise from intrinsic SiO2 defects, which are stabilized by adjacent impurities.Fig. 3. Heat dissipating along a and c axes during nanowire growth (a), leaving ideal thermal diffusion space during largequantities of nanowires growth (b).
These emissions also seem that they may be a combination of overlapping peaks (fig. 4(b), arrows).
这些放射也似乎/可能是一个重叠峰的组合(图4(b),箭头).
A small intensity change is noted on heating (dotted line), implying that the emission is slightly affected by temperature (fig. 4(b)).
加热时注意到有一个小强度的变化(虚线),这意味着放射略微受到温度的影响(图4(b)).
At higher temperatures (293 673 K), the luminescent intensity decreases slightly without a significant wavelength shift.
温度较高时(293 673K)发光强度略有降低,波长没有显著变换.
Recently, it was reported that amorphous SiOx nanowires, fabricated by laser ablation of Si-SiO2-Fe target, emit blue light at 420 and 470 nm[9], which coincides with our result (fig. 4(b)), the 10 nm difference(420 430 nm) probably being due to the presence of Fe.
最近有报道称,通过激光烧蚀Si-SiO2-Fe对象生成的非晶氧化硅(SiOx)纳米线,在420和470 nm时[9]放射出蓝光,这与我们的结果一致(图4(b)),其中10纳米(420 430 nm)的差异可能是由于有铁(Fe)的原因.
Note, however, that the signals may also arise from intrinsic SiO2 defects, which are stabilized by adjacent impurities.
但需要注意,这个信号也可能是因SiO2的内在缺陷引起的,而这些缺陷是通过邻近的杂质而得以稳定.
Fig. 3: Heat dissipating along a and c axes during nanowire growth (a), leaving ideal thermal diffusion space during large quantities of nanowires growth (b).
图3---纳米线生成过程中沿a、c轴线散热(a),纳米线大量生成过程中留下理想的热扩散空间(b).
这些放射也似乎/可能是一个重叠峰的组合(图4(b),箭头).
A small intensity change is noted on heating (dotted line), implying that the emission is slightly affected by temperature (fig. 4(b)).
加热时注意到有一个小强度的变化(虚线),这意味着放射略微受到温度的影响(图4(b)).
At higher temperatures (293 673 K), the luminescent intensity decreases slightly without a significant wavelength shift.
温度较高时(293 673K)发光强度略有降低,波长没有显著变换.
Recently, it was reported that amorphous SiOx nanowires, fabricated by laser ablation of Si-SiO2-Fe target, emit blue light at 420 and 470 nm[9], which coincides with our result (fig. 4(b)), the 10 nm difference(420 430 nm) probably being due to the presence of Fe.
最近有报道称,通过激光烧蚀Si-SiO2-Fe对象生成的非晶氧化硅(SiOx)纳米线,在420和470 nm时[9]放射出蓝光,这与我们的结果一致(图4(b)),其中10纳米(420 430 nm)的差异可能是由于有铁(Fe)的原因.
Note, however, that the signals may also arise from intrinsic SiO2 defects, which are stabilized by adjacent impurities.
但需要注意,这个信号也可能是因SiO2的内在缺陷引起的,而这些缺陷是通过邻近的杂质而得以稳定.
Fig. 3: Heat dissipating along a and c axes during nanowire growth (a), leaving ideal thermal diffusion space during large quantities of nanowires growth (b).
图3---纳米线生成过程中沿a、c轴线散热(a),纳米线大量生成过程中留下理想的热扩散空间(b).