英语翻译最早进入实用的半导体激光器,其激射波长为0.83到0.85um.这对应于光纤损耗谱的第一个窗口,多模光纤的损耗达

英语翻译
最早进入实用的半导体激光器,其激射波长为0.83到0.85um.这对应于光纤损耗谱的第一个窗口,多模光纤的损耗达2dB／km.围绕着提高光纤通信系统的容量,在70年代木期．在1．3um波长处得到了损耗更小(0.4dB/km3、色散系数接近于零的单模光纤．不久又开发出损耗进一步减少的1．55um单模光纤
窗口.早在60年代后期开始研究的长波长(1．3ym)InGaAsP／InP激光器也随着单模光纤的开发而进入实用系统.激射波长为1.55uPm的半导体激光器也很快达到实用化.为进一步为实现激光器低阀值、良好的动态单纵模、高的特征温度和长期工作的稳定性,而相继出现很多结构不同、性能优良的半导体激光器,如隐埋条形异质结(BH)激光器、分布反馈(DFH)激光器、分布布喇格反射(DBR)激光器、解理耦合腔激光器、量子阱激光器等.
发展可见光半导体激光器的动力来自光盘、光复印和光倍息处理技术的发展.早在1974荷兰菲利浦研究实验宝开始激光数字音频唱片(DAD)的研究.冈为在唱片上所存储数据位的数目反比于将激光束聚焦后的光斑直径,而该直径又正比于激光的波长.因此,为提高DAD的信息存取密度,需使用波长尽可能短的激光源.最早使用的是He—Ne激光器,但因其体积大棚寿命有限,故1982年上市的CD(CompactDisk)唱机上就采用波长为780nm的半导体激光器.近几年来．波长更短例如30nm的半导体激光器已成商品.体积小、价格低和寿命长的半导体激光器在光信息存储与处理上得到了最大的市场.shan体激光器的研究促进了大功率半导体激光器(包括列阵激光器)的发展.针对掺铁固体有派介质,如Nd：YAG、Nd；YVO等在波长为808nm左右有效强的吸收峰,因此用体积小、激射波长为808nm的半导体激光器代替通常的泵浦固体激光材料,可得到体积小、粟浦效率高(可达70％)的固体微光器.
随着掺稀土元素光纤放大器的发展,用作泵浦源的高功率半导体激光器又获得了另一个重要的应用.例如,用波长为980nm或1480nm、功率为数十毫瓦的半导体激光器泵光纤,可以得到高的增益系数,从而使光信号得到30dB以上的增益.光纤放大器已在光纤通信中得到重要应用.
总之,由于各种应用的需要,半导体激光器正在向提高光束质量上发展,即减少光束发散角以提高空间相干性；提高高速调制下的所谓动态单纵模特性；压窄光谱线宽以提高光束的时间相干性；进一步提高温度稳定性(即获得高的持征温度),半导体激光器的应用范围正在不断拓宽.
五、能带工程使半导体激光器产生新的飞跃随着分子束外延(MBE)和金属有机化合物化学气相沉积(MOCVD)技术的发展与完善,可以生长出原子尺寸量级的超薄层,从而可以形成对注入载流子产生持殊性质的量子阱与超晶格.这就便半导体能带出现了与块状(常称为体材料)半导体完全不同的形状与结构,并且可以根据需要,通过改变超薄层的应变量使能带结构发生变化.这种所谓的“能带工程”或“能带裁剪工程”赋予半导体激光器以新的生命力,其器件性能出现大的飞跃.例如,量子阱半导体激光器的连续输出功率可达数十瓦；特征温度高达数百度；激光器的阀值电流小于1mA；调制掺杂多量子激光器的张弛振荡频率高达30GHz,为通常的双异质结半导体激光器的5倍；在高速调制下线宽也比通常的半导体激光器低一个数
量级等.由于量子阱(特别是应变量子阱)结构的出现,使可见光半导体激光器的寿命提高,激射波长进一步变短.已经证明,能带工程从根本上改变了半导体激光器的面貌.在不久的将来,它的连续输出功率可能达到数百瓦乃至于瓦量级,使它不仅是信息领域的技校者,而且将在材料加工等方而发挥出重要作用.

The first semiconductor lasers into practical,the lasing wavelength 0.83鍒?.85 um.This corresponds to the fiber loss spectrum of a window,multi-mode optical fiber loss of 2 dB / km.Centered on improving the capacity of optical fiber communication systems,in the 1970s-period.1.3 um wavelength in the loss was smaller (0.4 dB/km3,close to zero coefficient of dispersion single mode optical fiber.Soon after to develop further reduce the wear and tear 1.55um single-mode optical fiber
Window.Back in the late 1960s began to study the long-wavelength (1.3 ym) InGaAsP / InP laser also with single-mode optical fiber into the development of practical systems.1.55 uPm lasing wavelength of the laser diode was quick to practical use.To further to achieve the low threshold lasers,good dynamic single-frequency,high temperature and the characteristics of the work of the long-term stability,and have a lot of different structures,high-performance semiconductor lasers,such as the hidden bar buried heterojunction (BH ) Laser,distributed feedback (DFH) laser,sub-Bubu Bragg reflector (DBR) laser,cleavage coupled lasers and quantum well lasers,and so on.
Visible development of the momentum from semiconductor laser discs,optical-times the income copying and processing technology development.As early as 1974 the Netherlands,Philips Research experimental laser-start digital audio recording (DAD) Study.Okazaki in the record store data on the number of inverse laser beam focus will be on the spot diameter and the diameter is proportional to the wavelength of the laser.Therefore,in order to improve access to the information DAD density,to use the laser wavelength as short as possible sources.The first is the use of the He-Ne laser,but because of their size greenhouses limited life,the 1982 listing of the CD (CompactDisk) jukebox on a wavelength of 780 nm semiconductor laser.In recent years.A shorter wavelength such as the 30 nm semiconductor lasers have become commodities.Small size,low price and long life in the semiconductor laser optical information storage and processing has been the largest market.shan of laser research to promote a high-power laser diode (including the array of lasers) development.For there were iron-doped solid medium,such as Nd:YAG,Nd; YVO,such as the wavelength of 808 nm-effective around the peaks,with small size,lasing wavelength of 808 nm semiconductor laser instead of the usual-pumped solid-state laser materials,Can be small in size,Su Pu high efficiency (up to 70%) for dim light of the solid.
With REE-doped fiber amplifier,used as the source of pumping high-power laser diode was also another important application.For example,using wavelength of 980 nm or 1480 nm,for the tens of milliwatts of power semiconductor laser pump fiber,can get high-gain coefficient,so that optical signals are more than 30 dB gain.Fiber amplifier in the optical fiber communication has been critical applications.
In short,the need for a variety of applications,semiconductor laser beam is to improve the quality of development,reducing the beam divergence angle to enhance the coherence of space,increasing the high-speed modulation of the so-called dynamic single-model; pressure narrow spectral line width to improve beam The time coherence; further enhance the stability of temperature (that is,high temperature on the strength of the levy),the application of the laser diode is continuously expanding.
5,the band works so that semiconductor lasers generate a new leap forward with the molecular beam epitaxy (MBE) and metal organic compounds chemical vapor deposition (MOCVD) technology development and improvement,can grow to atomic size of the order of ultra-thin layer,which can Formation of the carrier into a holding it is the nature of quantum wells and superlattices.This is a band semiconductor and massive (often referred to as material) Semiconductor completely different shape and structure,and can,if necessary,by changing variables should be ultra-thin layer of the band structure change.The so-called "band project" or "band cutting project" to semiconductor laser with a new vitality,its device performance a big leap.For example,the quantum well semiconductor laser output power for up to tens of watts; temperatures as high as several characteristics of Baidu; laser threshold current of less than 1 mA; multiple quantum modulation doped laser relaxation oscillation frequency of up to 30 GHz,as usual Double-heterojunction semiconductor laser five times in the high-speed modulation than the width of the semiconductor laser is usually a low number
Order of magnitude,and so on.As quantum well (especially strained quantum well) structure emerges,the visible light laser diode increase the life span,the lasing wavelength further shortened.Have proven that the band works to fundamentally change the face of the semiconductor laser.In the near future,its continuous power output may reach several hundred watts and watts in order to enable it is not only a technical school in the field of information,but also in material processing,and to play an important role.